A radical innovation in the field of low power transistors
TQ Transistors are pioneering a revolutionary negative capacitance topological quantum field effect transistor (NC-TQFET)
About Us
At TQ Transistors, we stand at the forefront of innovation, dedicated to revolutionizing the landscape of low-energy transistors. Our groundbreaking contribution to the field is the NC-TQFET, capable of surpassing current low-power transistors with an astounding improvement of over 10x in energy efficiency and 2x in switching speed.
Led by visionary Professor Michael Fuhrer, a globally recognized pioneer in atomically-thin materials, our distinguished team of researchers are committed to pushing the boundaries of what is achievable in the realm of low-energy transistors. With Professor Fuhrer’s expertise and our collective passion for cutting-edge technology, TQ Transistors is rewriting the narrative of what is possible in the semiconductor industry.
Join us on this exciting journey as we pave the way for a future where energy-efficient technology is not just a goal but a reality. At TQ Transistors, we are not just shaping the future; we are creating it.
TQ Transistors’ Technology
Challenges with Current Methods
The global semiconductor chip market, a significant engine of growth, reached approximately $600 billion in 2022 and is conservatively projected to experience a robust 12.2% Compound Annual Growth Rate (CAGR) until 2029, surpassing $1.3 trillion. Nonetheless, these projections face a looming threat in the form of an anticipated slowdown in Moore’s Law. Traditionally, Moore’s Law postulates that the number of transistors on a microchip will double approximately every two years; however, this exponential growth is expected to decelerate by 2025.
To overcome this impediment, there is a pressing need for alternative technologies capable of circumventing the conventional limitations of existing silicon-based solutions. The semiconductor industry also grapples with a global challenge driven by surging demand. The energy consumption of general-purpose computing is doubling approximately every three years, massively outpacing the world’s linear energy production growth (around 2% per year). The collective power requirements of projected mobile devices, computers, and expanding data centers, utilizing current semiconductor technology, are on a trajectory that outstrips the capacity of anticipated electrical generating sources. This will lead to global computing capacity being significantly limited by energy constraints within 1-2 decades. Addressing this worldwide challenge and the associated environmental concerns necessitates a transformative “atomic-level” efficiency improvement.
At the heart of the issue is the imperative to usher in a new era of semiconductor technology that not only meets but exceeds the demands of an increasingly interconnected and power-hungry world. Our collective mission is to pioneer solutions that not only navigate around the hurdles of current silicon-based methods but redefine the possibilities for a sustainable and efficient future.
Our Solution
TQ Transistors’ NC-TQFET technology, represents a paradigm shift in semiconductor design. By utilizing topological insulators in lieu of conventional silicon semiconductors, we propel the industry into a new era of efficiency and performance.
Topological insulators, distinguished by their insulating interiors and conductive boundaries, form the backbone of our innovation. Researchers have harnessed the unique properties of these materials, utilizing an electric field to switch between a topological insulator (electricity conducting along its edges) and a normal insulator (non-conductive). This transformative ability allows us to engineer a topological quantum field-effect transistor (TQFET), capable of switching at substantially lower voltages than conventional FETs. Crucially, this breakthrough overcomes the notorious “Boltzmann’s tyranny” limit of silicon, which poses a formidable challenge to achieving Moore’s Law at advanced semiconductor geometries.
In tandem with the material innovation involving topological insulators, the energy requirement is further reduced by using ferroelectric materials as negative capacitors, sandwiching the topological material and connecting it to the gate terminal. Ferroelectric materials have a spontaneous polarization that charges their surfaces, behaving as if they possess negative capacitance in certain regimes. This property, though inherently unstable, can be stabilized in a FET’s gate dielectric, amplifying the electric field and enabling lower voltage switching. The result is a monumental leap forward in energy efficiency, unlocking the full spectrum of low-power benefits associated with our innovative NC-TQFET technology.
At TQ Transistors, we are not merely setting goals; we are leading a revolution to redefine the possibilities in the semiconductor industry.
Our Technological Edge
Energy Efficiency
- Our radical innovations in transistor design allow the NC-TQFET to improve switching efficiency by over 10x.
- Using best known materials, this improvement could be extended to over 100x in the future.
Emissions Reduction
- Our transistors will significantly decrease the overall power consumption in electronic devices and data centers, directly lowering the demand for energy generation and subsequently reducing associated greenhouse gas emissions.
- Lower energy switching not only minimizes power consumption during active use but also contributes to the longevity of electronic devices. Prolonged device lifespan results in reduced manufacturing and disposal-related environmental impacts, further mitigating the overall carbon footprint in the electronics industry.
Product Improvement
Beyond energy efficiency, the NC-TQFET’s faster switching speeds unlock a series of benefits for the products in which they are implemented, including:
- Accelerated switching speeds empower electronic devices, like microprocessors and memory components, to execute instructions swiftly, thereby boosting overall processing power for more efficient operations.
- Faster switching minimizes signal transmission delays within electronic circuits, particularly benefiting applications requiring real-time responsiveness such as gaming, telecommunications, and high-frequency trading.
- Rapid switching in communication components, like routers and network switches, leads to improved data transfer rates, particularly crucial for applications demanding high-speed data communication.
- Faster switching results in cleaner and more accurate signal transitions, ensuring improved signal integrity within electronic devices and reducing the risk of data errors or signal degradation.
- Improved switching speed combined with the energy efficiency improvements will enable the creation of smaller, more compact electronic components without compromising performance, particularly beneficial in designing portable devices and wearables where space and weight considerations are crucial.
Our Team
Our team of inventors spearheading the development of the NC-TQFET stands at the forefront of cutting-edge research in this field. Leading the way is Professor Michael S. Fuhrer, a globally recognized pioneer in atomically-thin materials, encompassing graphene and innovative topological materials. His expertise extends to the fabrication and characterization of their electronic and optical properties.
Holding the role of Executive Director, Stuart Douglas manages the Governance and commercial aspects of TQ Transistors. Stuart is Co-Founder of Innovyz, an Australian, New Zealand and US based commercialisation group that specialise in licencing unique technology from universities and national laboratories and founding new companies around these technologies. They are a leading commercial group specialising in area of advanced materials and advanced manufacturing technologies. Innovyz has had significant success amongst their portfolio including several companies that have gone onto IPO and successful listings.
Adding to our dynamic team is Mr. Thomas Wrappe, based in Silicon Valley, California, serving as the US commercialization advisor for NC-TQFET. With an impressive track record spanning over 40 years, Mr. Wrappe brings a wealth of experience in successfully introducing new wireless products and technologies to high-volume, mass-market success. His diverse background in semiconductor ventures includes pivotal roles such as wireless IC and IP commercial planning at Texas Instruments, SVP of GPS products for Qualcomm (resulting in billions of embedded GPS cores), and executive advisory positions with Broadcom Connectivity BU. Since 2015, Mr. Wrappe has also been an esteemed member of the Electrical Engineering faculty at San Jose State University.
In addition Innovyz provides professional and executive assistance via their Shared Services division, including Legal, Accounting, HR, Capital Raising, Investor Relations and Governance oversight.